bdt63-a-b-c 26/09/2012 comset semiconductors 1 | 5 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 envelope. they are intended for output stages in audio equipment, general amplifiers, and analogue switching application. pnp complements are bdt62-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage bdt63 60 v bdt63a 80 BDT63B 100 bdt63c 120 v ceo collector-emitter voltage bdt63 60 v bdt63a 80 BDT63B 100 bdt63c 120 v ebo emitter-base voltage bdt63 5 v bdt63a BDT63B bdt63c i c collector current bdt63 10 a bdt63a BDT63B bdt63c i cm collector peak current bdt63 15 a bdt63a BDT63B bdt63c
bdt63-a-b-c 26/09/2012 comset semiconductors 2 | 5 semiconductors absolute maximum ratings symbol ratings value unit i b base current bdt63 250 ma bdt63a BDT63B bdt63c p t power dissipation @ t mb < 25 bdt63 90 w bdt63a BDT63B bdt63c t j junction temperature bdt63 150 c bdt63a BDT63B bdt63c t s storage temperature range bdt63 -65 to +150 bdt63a BDT63B bdt63c limiting values in accordance with the absolute maximum system (iec 134) thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base bdt63 1.39 k/w bdt63a BDT63B bdt63c r thj-a from junction to ambient in free air bdt63 70 k/w bdt63a BDT63B bdt63c
bdt63-a-b-c 26/09/2012 comset semiconductors 3 | 5 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0, v cb = v cbo max bdt63 - - 0.2 ma bdt63a BDT63B bdt63c i e = 0, v cb =1/2 v cbo max t j = 150 c bdt63 - - 2 ma bdt63a BDT63B bdt63c i ceo collector cutoff current i e = 0, v ce = 1/2 v ceo max bdt63 - - 0.5 ma bdt63a BDT63B bdt63c i ebo emitter cutoff current v eb = 5 v, i c = 0 bdt63 - - 5.0 ma bdt63a BDT63B bdt63c v ceo collector-emitter breakdown voltage i c = 30 ma, i b = 0 bdt63 60 - - v bdt63a 80 - - BDT63B 100 - - bdt63c 120 - - v ce(sat) collector-emitter saturation voltage (*) i c = 3 a, i b = 12 ma bdt63 - - 2 v bdt63a BDT63B bdt63c i c = 8 a, i b =80 ma bdt63 - - 2.5 bdt63a BDT63B bdt63c
bdt63-a-b-c 26/09/2012 comset semiconductors 4 | 5 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings min typ max unit v be(on) base-emitter voltage (*) i c = 3 a, v ce = 3 v bdt63 - - 2.5 v bdt63a BDT63B bdt63c h fe dc current gain (*) v ce = 3.0 v, i c = 3 a bdt63 1000 - - - bdt63a BDT63B bdt63c v ce = 3.0 v, i c = 10 a bdt63 - 3000 - bdt63a BDT63B bdt63c v ecf c-e diode forward voltage i f = 3 a bdt63 - - 2 v bdt63a BDT63B bdt63c c ob output capacitance i e = 0, v cb = 10 v f test = 1mhz bdt63 - 100 - pf bdt63a BDT63B bdt63c switching times symbol ratings test condition(s) min typ max unit t on turn-on time i c = 3 a , v cc = 10 v i b1 = -i b2 = 12 ma - 1 2.5 s t of f turn-off time - 5 10 (*) pulse width 300 s, duty cycle 2.0%
bdt63-a-b-c 26/09/2012 comset semiconductors 5 | 5 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter package collector
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